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| LAB MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) SEME BUX39 HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR FEATURES m * Fast Turn-On Time - 1ms @ IC = 15A 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) 22.23 (0.875) max. * High Current Capability Applications The BUX39 is an epitaxial silicon NPN planar transistor that has high current and high power handling capability and high switching speed. This device is especially suitable for switching-control amplifiers, power gates, switching regulators, powerswitching circuits converters, inverters and control circuits.Other recommended applications include DC-RF amplifiers and power oscillators. TO-204AA (TO-3) PIN 1 -- Base PIN 2 -- Emitter Case is Collector. The BUX39 is in SEMELAB's maintenance series and is NOT recommended for new designs. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VCBO VCEX VCER VCEO(sus) VEBO IC ICM IB Ptot Tstg, Tj TL Collector - Base Voltage Collector - Emitter Sustaining Voltage Collector - Emitter Voltage Collector - Emitter Sustaining Voltage Emitter - Base Voltage Collector Current Peak Collector Current Base Current Total Power Dissipation Derate above 25C Maximum Junction and Storage Temperature Range Lead Temperature 1/ 32 120V @ VBE = -1.5V @ RBE = 100W 120V 110V 90V 7V 30A 40A 6A 120W 0.68 W / C -65 to 100C 230C Prelim. 3/94 inch (0.8 mm) for 10 sec. max. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk LAB ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter VCEO(sus)* V(BR)EBO ICEO ICEX IEBO VCE(sat)* VBE(sat)* hFE* IS/b fT tON ts tf Collector - Emitter Sustaining Voltage Emitter - Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage DC Current Gain Second Breakdown Collector Current Transition Frequency Turn-On Time Storage Time Fall Time IC = 0.2A L = 25mH IC = 0 VCE = 70V VCE = 120V VCE = 120V TC = 125C IC = 0 IC = 12A IC = 20A IC = 20A IC = 12A IC = 20A VCE = 45V VCE = 30V IC = 1A IC = 20A IB = 2.5A IC = 20A VCC = 30V IB1 = -IB2 = 2.5A VBE = -5V IB = 1.2A IB = 2.5A IB = 2.5A VCE = 4V VCE = 4V t = 1s t = 1s VCE = 15V VCC = 30V 15 8 1 4 8 0.8 0.55 0.15 1.5 1 0.3 0.7 1.25 2.1 VBE = -1.5V VBE = -1.5V IE = 50mA SEME BUX39 Test Conditions IB = 0 Min. 90 7 Typ. Max. Unit V V 1 1 5 1 1.2 1.6 2.5 45 mA mA V V -- A MHz mA ms THERMAL CHARACTERISTICS RqJC Thermal Resistance Junction to Case 1.46 C/W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 3/94 |
Price & Availability of BUX39
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